%0 Journal Article
%T The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots<br>InAs/GaAs量子点光致发光光谱多峰结构发光本质
%A 梁志梅
%A 吴巨
%A 金鹏
%A 吕雪芹
%A 王占国
%J 半导体学报
%D 2008
%I 
%X Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated.Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks.By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified.Furthermore,inter-subband spacing of electrons and holes are deduced.
%K quantum dots
%K multi-peak structure
%K energy-level structure
%K photoluminescence<br>量子点
%K 多峰结构
%K 能级结构
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=35F16AAF19EBD6C1E4FB7FC9F8D77716&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=708DD6B15D2464E8&sid=6351704BFCFE6FB6&eid=C83A8C68D6FA0736&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16