MOS Model 20 Based RF-SOI LDMOS Large-Signal Modeling
基于MOS Model 20的RF-SOI LDMOS大信号建模

A novel large-signal equivalent circuit model of RF-SOI LDMOS based on Philips MOS Model 20(MM20)is presented.The weak avalanche effect and the power dissipation caused by self-heating are described.The RF parasitic elements are extracted directly from measured S-parameters with analytical methods.Their final values can be obtained quickly and accurately through the necessary optimization.The model is validated in DC,AC small-signal,and large-signal analyses for an RF-SOI LDMOS of 20-fingers(channel mask le...