%0 Journal Article
%T MOS Model 20 Based RF-SOI LDMOS Large-Signal Modeling<br>基于MOS Model 20的RF-SOI LDMOS大信号建模
%A Wang Huang
%A Sun Lingling
%A Yu Zhiping
%A Liu Jun
%A <br>王皇
%A 孙玲玲
%A 余志平
%A 刘军
%J 半导体学报
%D 2008
%I 
%X A novel large-signal equivalent circuit model of RF-SOI LDMOS based on Philips MOS Model 20(MM20)is presented.The weak avalanche effect and the power dissipation caused by self-heating are described.The RF parasitic elements are extracted directly from measured S-parameters with analytical methods.Their final values can be obtained quickly and accurately through the necessary optimization.The model is validated in DC,AC small-signal,and large-signal analyses for an RF-SOI LDMOS of 20-fingers(channel mask le...
%K RF-SOI LDMOS
%K large-signal model
%K MOS Model 20
%K harmonic power
%K Verilog-A<br>RF-SOI
%K LDMOS
%K 大信号模型
%K MOS
%K Model
%K 20
%K 谐波功率
%K Verilog-A
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4B6299979AA5EF2646603B38DDCEA8F6&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=F3090AE9B60B7ED1&sid=CC5F4A47280A3584&eid=5353AF589CC3F8A0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=20