Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD
利用双低温缓冲层和插入应变超晶格技术制备高质量InP-on-GaAs复合衬底的MOCVD生长

We investigate the growth of InP-on-GaAs combined with the advantages of double low-temperature(LT)buffers and strained layer surperlattices(SLSs).It is found that LT-InP/LT-GaAs double LT buffers are more effective for strain accommodation than a LT-InP single buffer in InP-on-GaAs.On the other hand,there is an optimal thickness for LT-GaAs for a given thickness of the LT-InP layer,at which the double LT buffers can reach the best state for strain adjustment.Furthermore,the position of insertion of SLSs sh...