%0 Journal Article
%T Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD<br>利用双低温缓冲层和插入应变超晶格技术制备高质量InP-on-GaAs复合衬底的MOCVD生长
%A Zhou Jing
%A Ren Xiaomin
%A Huang Yongqing
%A Wang Qi
%A <br>周静
%A 任晓敏
%A 黄永清
%A 王琦
%J 半导体学报
%D 2008
%I 
%X We investigate the growth of InP-on-GaAs combined with the advantages of double low-temperature(LT)buffers and strained layer surperlattices(SLSs).It is found that LT-InP/LT-GaAs double LT buffers are more effective for strain accommodation than a LT-InP single buffer in InP-on-GaAs.On the other hand,there is an optimal thickness for LT-GaAs for a given thickness of the LT-InP layer,at which the double LT buffers can reach the best state for strain adjustment.Furthermore,the position of insertion of SLSs sh...
%K InP-on-GaAs
%K double low-temperature buffers
%K InGaP/InP SLSs
%K MOCVD<br>InP-on-GaAs
%K 双低温缓冲层
%K InGaP/InP应变超晶格
%K MOCVD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2AD8C7F228C9EBA22C565CF454FAFA16&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=F3090AE9B60B7ED1&sid=F0513F17AA41A8C6&eid=A477487C019ACAC8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9