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Magnetic-Field-Induced Enhancement of Electronic Conduction in Weakly Coupled Supperlattices
磁场引起弱耦合超晶格中隧穿电流的增加

Keywords: GaAs/AlAs superlattices,vertical transport under magnetic field,tunneling circuit
GaAs/AlAs超晶格
,磁场下纵向输运,隧穿电流,高磁场,弱耦合超晶格,隧穿电流,Coupled,Weakly,Electronic,Conduction,转变,导向,共振隧穿,低磁场,变化,发生,隧穿机制,基态,量子阱,隧穿过程,电子,研究,静态磁场,方向

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Abstract:

We apply a magnetic field B along the axis of an n-type doped weakly-coupled GaAs/AlAs superlattice(SL)to investigate the carrier transport in a low electric field.An abnormal enhancement of the current intensity by perpendicular B is observed for the ground state transport.Electron tunneling or hopping conduction via elastic scattering at low B switches over into resonant tunneling at higher B because in the latter case the electrons only partially occupy the first Landau level.

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