%0 Journal Article
%T Magnetic-Field-Induced Enhancement of Electronic Conduction in Weakly Coupled Supperlattices<br>磁场引起弱耦合超晶格中隧穿电流的增加
%A Wang Zhilu
%A Sun Baoquan
%A <br>王志路
%A 孙宝权
%J 半导体学报
%D 2007
%I 
%X We apply a magnetic field B along the axis of an n-type doped weakly-coupled GaAs/AlAs superlattice(SL)to investigate the carrier transport in a low electric field.An abnormal enhancement of the current intensity by perpendicular B is observed for the ground state transport.Electron tunneling or hopping conduction via elastic scattering at low B switches over into resonant tunneling at higher B because in the latter case the electrons only partially occupy the first Landau level.
%K GaAs/AlAs superlattices
%K vertical transport under magnetic field
%K tunneling circuit<br>GaAs/AlAs超晶格
%K 磁场下纵向输运
%K 隧穿电流
%K 高磁场
%K 弱耦合超晶格
%K 隧穿电流
%K Coupled
%K Weakly
%K Electronic
%K Conduction
%K 转变
%K 导向
%K 共振隧穿
%K 低磁场
%K 变化
%K 发生
%K 隧穿机制
%K 基态
%K 量子阱
%K 隧穿过程
%K 电子
%K 研究
%K 静态磁场
%K 方向
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6001B30D9DAE54D8&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=E158A972A605785F&sid=811ACA5D3673A764&eid=385E3C2062167B88&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13