|
|
半导体学报 2009
Luminescence spectroscopy of ion implanted AlN bulk single crystal
|
Abstract:
High concentrations of Si and Zn were implanted into (0001) AlN bulk crystal grown by the self-seeded physical vapor transport (PVT) method. Cathode luminescence (CL) and photoluminescence (PL) spectroscopy were used to investigate the defects and propert
