%0 Journal Article
%T Luminescence spectroscopy of ion implanted AlN bulk single crystal<br>离子注入AlN 单晶的荧光谱分析
%A Li Weiwei
%A Zhao Youwen
%A Dong Zhiyuan
%A Yang Jun
%A Hu Weijie
%A Ke Jianhong
%A Huang Yan
%A Gao Zhenhua
%A <br>李巍巍
%A 赵有文
%A 董志远
%A 杨俊
%A 胡炜杰
%A 客建红
%A 黄艳
%A 高振华
%J 半导体学报
%D 2009
%I 
%X High concentrations of Si and Zn were implanted into (0001) AlN bulk crystal grown by the self-seeded physical vapor transport (PVT) method. Cathode luminescence (CL) and photoluminescence (PL) spectroscopy were used to investigate the defects and propert
%K AlN
%K implantation
%K impurity
%K defect<br>AlN，注入，杂质
%K 缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C79A6DA65E11BFE82D5D180A2D2C6644&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=5D311CA918CA9A03&sid=11E26AD3D0FFF0E2&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15