Synthesis and Characterization of SiCOF/a-C : F Double-Layer Films with Low Dielectric Constant for Copper Interconnects
Synthesis and Characterization of SiCOF/a-C∶F Double-Layer Films with Low Dielectric Constant for Copper Interconnects

Keywords: low dielectric constant material,FTIR,SIMS
低介电常数介质,FTIRSIMS,low,dielectric,constant,material,FTIR,SIMS,铜互连,低介电常数,膜的制备,表征,Characterization,Synthesis,Interconnects,Copper,Low,Dielectric,Constant,barrier,carbon,aluminum,layer,films,recognizable,addition,difference,annealing,causes,rapid

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Abstract:

用等离子体化学气相淀积系统制备了一种新颖的SiCOF/a-C:F双层低介电常数介质薄膜,并用红外光谱表征了该薄膜的化学结构.通过测量介质的折射率发现该薄膜长时间暴露在空气中,其光频介电常数几乎不变.然而,随退火温度的增加,其光频介电常数则会减小.基于实验结果讨论了几种可能的机理.二次离子质谱分析表明在Al/a-C:F/Si结构中F和C很容易扩散到Al中,但在Al/SiCOF/a-C:F/Si结构中,则没有发现C的扩散,说明SiCOF充当了C扩散的阻挡层.分析还发现在SiCOF和a-C:F之间没有明显的界面层.

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