%0 Journal Article
%T Synthesis and Characterization of SiCOF/a-C : F Double-Layer Films with Low Dielectric Constant for Copper Interconnects<br>Synthesis and Characterization of SiCOF/a-C∶F Double-Layer Films with Low Dielectric Constant for Copper Interconnects
%A Zhang Wei
%A Zhu Lian
%A Sun Qingqing
%A Lu Hongliang
%A Ding Shijin
%A <br>Zhang Wei
%A Zhu Lian
%A Sun Qingqing
%A Lu Hongliang
%A Ding Shijin
%J 半导体学报
%D 2006
%I 
%X 用等离子体化学气相淀积系统制备了一种新颖的SiCOF/a-C:F双层低介电常数介质薄膜,并用红外光谱表征了该薄膜的化学结构.通过测量介质的折射率发现该薄膜长时间暴露在空气中,其光频介电常数几乎不变.然而,随退火温度的增加,其光频介电常数则会减小.基于实验结果讨论了几种可能的机理.二次离子质谱分析表明在Al/a-C:F/Si结构中F和C很容易扩散到Al中,但在Al/SiCOF/a-C:F/Si结构中,则没有发现C的扩散,说明SiCOF充当了C扩散的阻挡层.分析还发现在SiCOF和a-C:F之间没有明显的界面层.
%K low dielectric constant material
%K FTIR
%K SIMS<br>低介电常数介质
%K FTIRSIMS
%K low
%K dielectric
%K constant
%K material
%K FTIR
%K SIMS
%K 铜互连
%K 低介电常数
%K 膜的制备
%K 表征
%K Characterization
%K Synthesis
%K Interconnects
%K Copper
%K Low
%K Dielectric
%K Constant
%K barrier
%K carbon
%K aluminum
%K layer
%K films
%K recognizable
%K addition
%K difference
%K annealing
%K causes
%K rapid
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2E2F03415196B80E&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=38B194292C032A66&sid=9BA67A0B76A3DBA8&eid=DDEED1BDDBFAA8A7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=10