Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs
SiN钝化前的NF3等离子体处理对AlGaN/GaN HEMT性能的影响

NF3 plasma surface treatment in inductively coupled plasma (ICP) system prior to SiN passivation on the characteristics of AlGaN/GaN HEMTs has been studied.The results show that current collapse is effectively suppressed while DC and RF performance is not affected for the AlGaN/GaN HEMTs with low power NF3 plasma treated.The AlGaN/GaN HEMT with 6 minutes NF3 plasma treated reaches a power density of 6.15W/mm at 2GHz and 30V operating voltage while the device without NF3 plasma treated only gets an output power density of 1.82W/mm.