%0 Journal Article
%T Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs<br>SiN钝化前的NF3等离子体处理对AlGaN/GaN HEMT性能的影响
%A Ren Chunjiang
%A Chen Tangsheng
%A Jiao Gang
%A Chen Gang
%A Xue Fangshi
%A Chen Chen
%A <br>任春江
%A 陈堂胜
%A 焦刚
%A 陈刚
%A 薛舫时
%A 陈辰
%J 半导体学报
%D 2008
%I 
%X NF3 plasma surface treatment in inductively coupled plasma (ICP) system prior to SiN passivation on the characteristics of AlGaN/GaN HEMTs has been studied.The results show that current collapse is effectively suppressed while DC and RF performance is not affected for the AlGaN/GaN HEMTs with low power NF3 plasma treated.The AlGaN/GaN HEMT with 6 minutes NF3 plasma treated reaches a power density of 6.15W/mm at 2GHz and 30V operating voltage while the device without NF3 plasma treated only gets an output power density of 1.82W/mm.
%K AlGaN/GaN
%K HEMT
%K current collapse
%K NF3 plasma treatment<br>AlGaN/GaN
%K 高电子迁移率晶体管
%K 电流崩塌
%K NF3等离子体处理
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1262CA57A9FC70D1D5660B716B495490&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=59906B3B2830C2C5&sid=A65D597F71D915F7&eid=CE8FFD75A1883F19&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9