14W X-Band AlGaN/GaN HEMT Power MMICs
14W X波段AlGaN/GaN HEMT功率MMIC

The development of an AlGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is presented.A recessed-gate and a field-plate are used in the device processing to improve the performance of the AlGaN/GaN HEMTs.S-parameter measurements show that the frequency performance of the AlGaN/GaN HEMTs depends significantly on the operating voltage.Higher operating voltage is a key to higher power gain for the AlGaN/GaN HEMTs.The developed 2-stage power MMIC delivers an output power of more than 10W with...