%0 Journal Article
%T 14W X-Band AlGaN/GaN HEMT Power MMICs<br>14W X波段AlGaN/GaN HEMT功率MMIC
%A Chen Tangsheng
%A Zhang Bin
%A Ren Chunjiang
%A Jiao Gang
%A Zheng Weibin
%A Chen Chen
%A <br>陈堂胜
%A 张斌
%A 任春江
%A 焦刚
%A 郑维彬
%A 陈辰
%J 半导体学报
%D 2008
%I 
%X The development of an AlGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is presented.A recessed-gate and a field-plate are used in the device processing to improve the performance of the AlGaN/GaN HEMTs.S-parameter measurements show that the frequency performance of the AlGaN/GaN HEMTs depends significantly on the operating voltage.Higher operating voltage is a key to higher power gain for the AlGaN/GaN HEMTs.The developed 2-stage power MMIC delivers an output power of more than 10W with...
%K X-band
%K AlGaN/GaN
%K HEMTs
%K power MMIC<br>X波段
%K AlGaN/GaN
%K 高电子迁移率晶体管
%K 功率MMIC
%K X-band
%K AlGaN/GaN
%K HEMTs
%K power
%K MMIC
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=274102A067A47FD3359097D48655D956&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=B31275AF3241DB2D&sid=4E3F821C82005C21&eid=0342E221E01D5238&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=8