%0 Journal Article %T 14W X-Band AlGaN/GaN HEMT Power MMICs
14W X波段AlGaN/GaN HEMT功率MMIC %A Chen Tangsheng %A Zhang Bin %A Ren Chunjiang %A Jiao Gang %A Zheng Weibin %A Chen Chen %A
陈堂胜 %A 张斌 %A 任春江 %A 焦刚 %A 郑维彬 %A 陈辰 %J 半导体学报 %D 2008 %I %X The development of an AlGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is presented.A recessed-gate and a field-plate are used in the device processing to improve the performance of the AlGaN/GaN HEMTs.S-parameter measurements show that the frequency performance of the AlGaN/GaN HEMTs depends significantly on the operating voltage.Higher operating voltage is a key to higher power gain for the AlGaN/GaN HEMTs.The developed 2-stage power MMIC delivers an output power of more than 10W with... %K X-band %K AlGaN/GaN %K HEMTs %K power MMIC
X波段 %K AlGaN/GaN %K 高电子迁移率晶体管 %K 功率MMIC %K X-band %K AlGaN/GaN %K HEMTs %K power %K MMIC %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=274102A067A47FD3359097D48655D956&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=B31275AF3241DB2D&sid=4E3F821C82005C21&eid=0342E221E01D5238&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=8