Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos
隐埋层中二维效应对全耗尽SOI非对称HALO结构阈值电压的影响

Based on an analytical threshold voltage model of fully depleted silicon-on-insulator (SOI) MOSFETs with asymmetric HALO structures,the impact of the two-dimension effects in a buried-oxide layer on threshold voltage is discussed.Compared to the 1D model,two-dimensional effects in the buried-oxide layer of the deep submicron MOSFET device create the short-channel effect more quickly.The predictions of the new model are in good agreement with those of the two-dimension numerical simulator MEDICI.