%0 Journal Article
%T Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos<br>隐埋层中二维效应对全耗尽SOI非对称HALO结构阈值电压的影响
%A Xu Jian
%A Ding Lei
%A Han Zhengsheng
%A Zhong Chuanjie
%A <br>许剑
%A 丁磊
%A 韩郑生
%A 钟传杰
%J 半导体学报
%D 2008
%I 
%X Based on an analytical threshold voltage model of fully depleted silicon-on-insulator (SOI) MOSFETs with asymmetric HALO structures,the impact of the two-dimension effects in a buried-oxide layer on threshold voltage is discussed.Compared to the 1D model,two-dimensional effects in the buried-oxide layer of the deep submicron MOSFET device create the short-channel effect more quickly.The predictions of the new model are in good agreement with those of the two-dimension numerical simulator MEDICI.
%K threshold voltage
%K two-dimension effects
%K fully depleted SOI
%K HALO structure<br>阈值电压
%K 二维效应
%K 全耗尽SOI
%K HALO结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D9BFCBEE2AD4425BF9BD63794AA456BF&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=38B194292C032A66&sid=8966A0F1B07BE5EE&eid=12AD09BCF4A6E651&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8