Simulation of SU-8 Photoresist Profile in Deep UV Lithography
SU-8胶深紫外光刻模拟

A new simulation method is proposed which considers diffraction,reflection,refraction,energy loss,absorption coefficient change,post-bake,and development.Compared with previous simulation methods,the present results show good agreement with experimental results.This shows that the simulation accuracy is increased.It is useful for the research of SU-8 phoptoresist deep UV lithography processes and micro-electro-mechanical system design.