%0 Journal Article
%T Simulation of SU-8 Photoresist Profile in Deep UV Lithography<br>SU-8胶深紫外光刻模拟
%A Feng Ming
%A Huang Qing''''an
%A Li Weihua
%A Zhou Zaifa
%A Zhu Zhen
%A <br>冯明
%A 黄庆安
%A 李伟华
%A 周再发
%A 朱真
%J 半导体学报
%D 2007
%I 
%X A new simulation method is proposed which considers diffraction,reflection,refraction,energy loss,absorption coefficient change,post-bake,and development.Compared with previous simulation methods,the present results show good agreement with experimental results.This shows that the simulation accuracy is increased.It is useful for the research of SU-8 phoptoresist deep UV lithography processes and micro-electro-mechanical system design.
%K SU-8 photoresist
%K lithography simulation
%K development profile<br>SU-8胶
%K 光刻模拟
%K 显影轮廓
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C46EE5D194517398&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=9CF7A0430CBB2DFD&sid=4D36A7D6CAFA227E&eid=2EE9948447FBE67D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9