Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP
Ar+刻蚀对InGaAs, n-InP和p-InP表面损伤及消除

Surface damage on InGaAs,n-InP,and p-InP after Ar+ etching is studied,and it is removed by wet etching post treatments.After Ar+ etching,the root-mean-square roughness of InGaAs surface is lower,but the roughness of n-InP and p-InP surfaces is significantly higher.The photoluminescence (PL) intensity of Ar+-etched InGaAs increases,but those of Ar+-etched n-InP and p-InP decreases.X-ray photoelectron spectroscopy (XPS) is used to investigate the atomic concentration of three samples before Ar+ etching and after Ar+ etching and wet etching post treatments.After Ar+ etching,the content of In and Ga at the InGaAs surface increases markedly,and there is generally a preferential loss of P from n-InP and p-InP surfaces.The surface atomic concentration of the samples after wet etching is almost the same as before Ar+ etching.