%0 Journal Article
%T Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP<br>Ar+刻蚀对InGaAs, n-InP和p-InP表面损伤及消除
%A 吕衍秋
%A 越方禹
%A 洪学鹍
%A 陈江峰
%A 韩冰
%A 吴小利
%A 龚海梅
%J 半导体学报
%D 2007
%I 
%X Surface damage on InGaAs,n-InP,and p-InP after Ar+ etching is studied,and it is removed by wet etching post treatments.After Ar+ etching,the root-mean-square roughness of InGaAs surface is lower,but the roughness of n-InP and p-InP surfaces is significantly higher.The photoluminescence (PL) intensity of Ar+-etched InGaAs increases,but those of Ar+-etched n-InP and p-InP decreases.X-ray photoelectron spectroscopy (XPS) is used to investigate the atomic concentration of three samples before Ar+ etching and after Ar+ etching and wet etching post treatments.After Ar+ etching,the content of In and Ga at the InGaAs surface increases markedly,and there is generally a preferential loss of P from n-InP and p-InP surfaces.The surface atomic concentration of the samples after wet etching is almost the same as before Ar+ etching.
%K Ar+ etching
%K InGaAs
%K InP
%K wet etching
%K surface damage<br>Ar+刻蚀
%K InGaAs
%K InP
%K 湿法腐蚀
%K 表面损伤
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=ECB3059A66238C72&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=CA4FD0336C81A37A&sid=B62E0EEFE746E568&eid=6FBD78E3BAB60869&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9