On-Resistance Degradations Under Different Stress Conditions in High Voltage pLEDMOS Transistors and an Improved Method
高压pLEDMOS器件在不同应力条件下导通电阻的衰退及改进方法

The on-resistance degradations of the p-type lateral extended drain MOS transistor (pLEDMOS) with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated.This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor.An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide.The effects are analyzed with a MEDICI simulator.