%0 Journal Article
%T On-Resistance Degradations Under Different Stress Conditions in High Voltage pLEDMOS Transistors and an Improved Method<br>高压pLEDMOS器件在不同应力条件下导通电阻的衰退及改进方法
%A Sun Weifeng
%A Wu Hong
%A Shi Longxing
%A Yi Yangbo
%A Li Haisong
%A <br>孙伟锋
%A 吴虹
%A 时龙兴
%A 易扬波
%A 李海松
%J 半导体学报
%D 2008
%I 
%X The on-resistance degradations of the p-type lateral extended drain MOS transistor (pLEDMOS) with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated.This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor.An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide.The effects are analyzed with a MEDICI simulator.
%K pLEDMOS
%K on-resistance degradation
%K hot electron injection and trapping
%K thick gate oxide<br>p型横向延伸漏金属氧化物半导体管
%K 导通电阻衰退
%K 热电子注入和俘获
%K 厚栅氧
%K pLEDMOS
%K on-resistance
%K degradation
%K hot
%K electron
%K injection
%K and
%K trapping
%K thick
%K gate
%K oxide
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5C71B74EBDACCFB76EEBED88A7E11540&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&sid=797D49279EA93BC4&eid=AD16A18DBD734D13&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11