TEM Characterization of Defects in GaN/InGaN Multi-Quantum Wells Grown on Silicon by MOCVD
Si衬底MOCVD生长GaN/InGaN多量子阱缺陷TEM研究

Transmission electron microscope(TEM)measurements performed on InGaN/GaN multiple-quantum-well(MQW)deposited Silicon substrates have been investigated.By taking high-resolution transmission electron microscopy(HRTEM)imagery,electron diffraction contrast imagery,and electron diffraction image in precincts between the Si substrate and the AlN buffer area,and also taking Two-beam electron diffract contrast imagery around the quantum well area,we have researched the characteristics of dislocation.In addition,we...