%0 Journal Article
%T TEM Characterization of Defects in GaN/InGaN Multi-Quantum Wells Grown on Silicon by MOCVD<br>Si衬底MOCVD生长GaN/InGaN多量子阱缺陷TEM研究
%A Zhu Hu
%A Li Cuiyun
%A Mo Chunlan
%A Jiang Fengyi
%A Zhang Meng
%A <br>朱华
%A 李翠云
%A 莫春兰
%A 江风益
%A 张萌
%J 半导体学报
%D 2008
%I 
%X Transmission electron microscope(TEM)measurements performed on InGaN/GaN multiple-quantum-well(MQW)deposited Silicon substrates have been investigated.By taking high-resolution transmission electron microscopy(HRTEM)imagery,electron diffraction contrast imagery,and electron diffraction image in precincts between the Si substrate and the AlN buffer area,and also taking Two-beam electron diffract contrast imagery around the quantum well area,we have researched the characteristics of dislocation.In addition,we...
%K MQW
%K Si substrate
%K dislocation
%K TEM
%K SEM<br>MQW
%K Si衬底
%K 位错
%K TEM
%K SEM
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4792AAD4148F2951DB3A10A12C7434B0&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=38B194292C032A66&sid=92DA076AF6760FAC&eid=BA305A52E2EE9350&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14