Grain boundary layer behavior in ZnO/Si heterostructure
ZnO/Si异质结中的晶界层行为研究

The grain boundary layer behavior in ZnO/Si heterostucture is investigated.The current-voltage(I-V) curves,deep level transient spectra(DLTS) and capacitance-voltage(C-V) curves are measured.The transport currents of ZnO/Si heterojunction are dominated by grain boundary layer as high densities of interfacial states existed.The interesting phenomenon that the crossing of In I-V curves of ZnO/Si heterojunction at various measurement temperatures and the decrease of its effective barrier height with the decrem...