%0 Journal Article
%T Grain boundary layer behavior in ZnO/Si heterostructure<br>ZnO/Si异质结中的晶界层行为研究
%A Liu Bingce
%A Liu Cihui
%A Yi Bo
%A <br>刘秉策
%A 刘磁辉
%A 易波
%J 半导体学报
%D 2010
%I 
%X The grain boundary layer behavior in ZnO/Si heterostucture is investigated.The current-voltage(I-V) curves,deep level transient spectra(DLTS) and capacitance-voltage(C-V) curves are measured.The transport currents of ZnO/Si heterojunction are dominated by grain boundary layer as high densities of interfacial states existed.The interesting phenomenon that the crossing of In I-V curves of ZnO/Si heterojunction at various measurement temperatures and the decrease of its effective barrier height with the decrem...
%K ZnO/Si heterostructure
%K grain boundary layer
%K intrinsic defects
%K deep level<br>ZnO/Si异质结，晶界层，本征缺陷，深能级
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1DF8B3426A008733C305F3442DA87C63&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=8669C5E9C7939EC9&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14