GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation
GaN基MSM结构光伏型紫外探测器建模及其仿真分析

Based on the principles of metal-semiconductor-metal Schottky barrier photodetectors(MSM-PD), using the carrier rate equations,the circuit simulation model of a GaN-based MSM photovoltaic ultraviolet detector is constructed through an appropriately equivalent process.By using the Pspice analytical function of Cadence soft on the model,the relationship between the photocurrent and the terminal voltage under different UV light powers is analyzed.The result shows that under the given UV power,the photocurrent ...