%0 Journal Article
%T GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation<br>GaN基MSM结构光伏型紫外探测器建模及其仿真分析
%A Chen Yiren
%A Song Hang
%A Li Dabing
%A Sun Xiaojuan
%A Li Zhiming
%A Jiang Hong
%A Miao Guoqing
%A <br>陈一仁
%A 宋航
%A 黎大兵
%A 孙晓娟
%A 李志明
%A 蒋红
%A 缪国庆
%J 半导体学报
%D 2011
%I 
%X Based on the principles of metal-semiconductor-metal Schottky barrier photodetectors(MSM-PD), using the carrier rate equations,the circuit simulation model of a GaN-based MSM photovoltaic ultraviolet detector is constructed through an appropriately equivalent process.By using the Pspice analytical function of Cadence soft on the model,the relationship between the photocurrent and the terminal voltage under different UV light powers is analyzed.The result shows that under the given UV power,the photocurrent ...
%K MSM structure
%K simulation
%K equivalent circuit
%K ultraviolet detector<br>光电探测器
%K 紫外探测器
%K 仿真模型
%K MSM
%K GaN
%K 结构建模
%K Cadence
%K Pspice
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A0FA1FF47852CF19DDBD933F8DD8A2DB&yid=9377ED8094509821&vid=9971A5E270697F23&iid=38B194292C032A66&sid=B9AA7F0EDC1BFEE1&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0