A new static induction thyristor with high forward blocking voltage and excellent switching performances
一种具有高正向阻断电压及优良开关特性的新型静电感应晶闸管

A new static induction thyristor(SITH) with a strip anode region and p~-buffer layer structure(SAP~-B) has been successfully designed and fabricated.This structure is composed of a p~-buffer layer and lightly doped n~- regions embedded in the p~+-emitter.Compared with the conventional structure of a buried-gate with a diffused source region(DSR buried-gate),besides the simple fabrication process,the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V,the bloc...