%0 Journal Article
%T A new static induction thyristor with high forward blocking voltage and excellent switching performances<br>一种具有高正向阻断电压及优良开关特性的新型静电感应晶闸管
%A Zhang Caizhen
%A Wang Yongshun
%A Liu Chunjuan
%A Wang Zaixing
%A <br>张彩珍
%A 王永顺
%A 刘春娟
%A 汪再兴
%J 半导体学报
%D 2010
%I 
%X A new static induction thyristor(SITH) with a strip anode region and p~-buffer layer structure(SAP~-B) has been successfully designed and fabricated.This structure is composed of a p~-buffer layer and lightly doped n~- regions embedded in the p~+-emitter.Compared with the conventional structure of a buried-gate with a diffused source region(DSR buried-gate),besides the simple fabrication process,the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V,the bloc...
%K static induction thyristor
%K strip anode region and p?? buffer layer structure
%K forward blocking voltage
%K turn-off time<br>静电感应晶闸管
%K 条状阳极P-缓冲层结构（SAP-B）
%K 正向阻断电压
%K 关断时间
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2DA50195BC15F01498709C5CA92871BE&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=B9AA7F0EDC1BFEE1&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13