Direct Tunneling Effect in SiC Schottky Contacts
SiC肖特基接触的直接隧穿效应

The direct tunneling effect in SiC Schottky contacts is simulated based on electron tunneling probabilities through a triangular barrier, which are accurately solved using the one-dimensional time-independent Schroedinger equation. The simulation results show that the proposed method has the advantages of greater accuracy and adaptability to SiC Schottky contacts in high fields over the WKB approximation. It also can seamlessly treat thermionic emission and tunneling current.