%0 Journal Article
%T Direct Tunneling Effect in SiC Schottky Contacts<br>SiC肖特基接触的直接隧穿效应
%A Tang Xiaoyan
%A Zhang Yimen
%A Zhang Yuming
%A Guo Hui
%A Zhang Lin
%A <br>汤晓燕
%A 张义门
%A 张玉明
%A 郭辉
%A 张林
%J 半导体学报
%D 2006
%I 
%X The direct tunneling effect in SiC Schottky contacts is simulated based on electron tunneling probabilities through a triangular barrier, which are accurately solved using the one-dimensional time-independent Schroedinger equation. The simulation results show that the proposed method has the advantages of greater accuracy and adaptability to SiC Schottky contacts in high fields over the WKB approximation. It also can seamlessly treat thermionic emission and tunneling current.
%K SiC
%K Schottky contact
%K direct tunneling
%K WKB approximation<br>SiC
%K 肖特基接触
%K 直接隧穿
%K WKB近似
%K 肖特基接触
%K 隧穿效应
%K Schottky
%K Tunneling
%K Effect
%K 隧穿电流
%K 发射电流
%K 热电子
%K 地计算
%K 连续
%K 材料
%K 条件
%K 高场
%K 工作
%K 近似
%K 方法
%K 显示
%K 结果
%K 模拟
%K 隧穿几率
%K 势垒
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=266291F2FD44736D&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=CA4FD0336C81A37A&sid=0584DB487B4581F4&eid=6425DAE0271BB751&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7