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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT
Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping,
Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping
Keywords: AlGaN/GaN HEMT,2D modeling and simulation,polarization charges,quantum effects
AlGaN/GaN高电子迁移率晶体管,二维模型与模拟,极化电荷,量子效应,AlGaN/GaN,HEMT,2D,modeling,and,simulation,polarization,charges,quantum,effects,AlGaN,HEMTs,静态模型,模拟,Modeling,and,Simulation,Numerical,analysis,discussion,based,simulation,results,transfer,temperature,characteristics,transconductance,curves,conduction,band,electron,distribution,influences,polarization
Abstract:
考虑AlGaN/GaN材料的自发、压电极化效应和量子效应,通过泊松方程、薛定谔方程和流体力学方程组的数值自洽求解方法,对AlGaN/GaN HEMT的二维静态模型与模拟问题进行了研究,得到了器件区域的导带图、二维电子气分布、电子温度特性、直流输出和转移特性,并对模拟结果进行了分析与讨论. Full-Text
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