%0 Journal Article
%T Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT
%A Xue Lijun
%A Xia Yang
%A Liu Ming
%A Wang Yan
%A Shao Xue
%A Lu Jing
%A Ma Jie
%A Xie Changqing
%A Yu Zhiping
%A <br>Xue Lijun
%A Xia Yang
%A Liu Ming
%A Wang Yan
%A Shao Xue
%A Lu Jing
%A Ma Jie
%A Xie Changqing
%A Yu Zhiping
%J 半导体学报
%D 2006
%I 
%X 考虑AlGaN/GaN材料的自发、压电极化效应和量子效应,通过泊松方程、薛定谔方程和流体力学方程组的数值自洽求解方法,对AlGaN/GaN HEMT的二维静态模型与模拟问题进行了研究,得到了器件区域的导带图、二维电子气分布、电子温度特性、直流输出和转移特性,并对模拟结果进行了分析与讨论.
%K AlGaN/GaN HEMT
%K 2D modeling and simulation
%K polarization charges
%K quantum effects<br>AlGaN/GaN高电子迁移率晶体管
%K 二维模型与模拟
%K 极化电荷
%K 量子效应
%K AlGaN/GaN
%K HEMT
%K 2D
%K modeling
%K and
%K simulation
%K polarization
%K charges
%K quantum
%K effects
%K AlGaN
%K HEMTs
%K 静态模型
%K 模拟
%K Modeling
%K and
%K Simulation
%K Numerical
%K analysis
%K discussion
%K based
%K simulation
%K results
%K transfer
%K temperature
%K characteristics
%K transconductance
%K curves
%K conduction
%K band
%K electron
%K distribution
%K influences
%K polarization
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1215917CD77D3A21&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=0B39A22176CE99FB&sid=88D36036CFF69B3C&eid=358F98408588E522&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13