Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots
室温全电可操作的InAs/GaAs量子点存储器

Memory devices fabricated in high-electron-mobility transistors with embedded InAs quantum dots (QDs) can be fully controlled by gate bias at room temperature.The memory effect is due to the deep levels induced by the QD layer,and rather than the charging and discharging of intrinsic energy levels in QDs,which is demonstrated by the hysteresis,real-time and bias-cooling C-V measurements