%0 Journal Article
%T Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots<br>室温全电可操作的InAs/GaAs量子点存储器
%A Du Jun
%A Wang Qingpu
%A Balocco C
%A Song A M
%A <br>杜 军
%A 王卿璞
%A Balocco C
%A Song A M
%J 半导体学报
%D 2006
%I 
%X Memory devices fabricated in high-electron-mobility transistors with embedded InAs quantum dots (QDs) can be fully controlled by gate bias at room temperature.The memory effect is due to the deep levels induced by the QD layer,and rather than the charging and discharging of intrinsic energy levels in QDs,which is demonstrated by the hysteresis,real-time and bias-cooling C-V measurements
%K InAs/GaAs self-assembled quantum dots
%K memory device
%K bias-cooling
%K deep levels<br>InAs/GaAs量子点
%K 存储器
%K 偏压降温
%K 深能级
%K 室温
%K 操作
%K InAs
%K GaAs
%K 量子点
%K 存储器
%K Based
%K Devices
%K Memory
%K Controlled
%K 放电
%K 本征
%K 深能级
%K 存储机理
%K 实时测试
%K 特性
%K 降温
%K 偏压
%K 回线
%K 延滞
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=14856D1FC18ACF87&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=0B39A22176CE99FB&sid=8C27CCA578E52082&eid=4C2B9916B58305BE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=19