An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network
8GHz带有RC稳定网络的AlGaN/GaN HEMTs内匹配功率合成放大器的设计

8GHz 20W internally matched AlGaN/GaN HEMTs have been developed.The input and output matching networks are realised with microstrip lines on a 0.381mm thick alumina substrate.To improve the stability factor K of the device,a lossy RC network is used at the input of the device.The developed internally matched power amplifier module exhibits 43dBm (20W) power output with a 7.3dB linear gain,38.1% PAE,and combined power efficiency of 70.6% at 8GHz.