%0 Journal Article %T An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network
8GHz带有RC稳定网络的AlGaN/GaN HEMTs内匹配功率合成放大器的设计 %A Zeng Xuan %A Chen Xiaojuan %A Liu Guoguo %A Yuan Tingting %A Chen Zhongzi %A Zhang Hui %A Wang Liang %A Li Chengzhan %A Pang Lei %A Liu Xinyu %A Liu Jian %A
曾轩 %A 陈晓娟 %A 刘果果 %A 袁婷婷 %A 陈中子 %A 张辉 %A 王亮 %A 李诚瞻 %A 庞磊 %A 刘新宇 %A 刘键 %J 半导体学报 %D 2008 %I %X 8GHz 20W internally matched AlGaN/GaN HEMTs have been developed.The input and output matching networks are realised with microstrip lines on a 0.381mm thick alumina substrate.To improve the stability factor K of the device,a lossy RC network is used at the input of the device.The developed internally matched power amplifier module exhibits 43dBm (20W) power output with a 7.3dB linear gain,38.1% PAE,and combined power efficiency of 70.6% at 8GHz. %K AlGaN/GaN HEMTs %K AlGaN/GaN HEMTs %K internally match %K power combining %K power amplifier
内匹配 %K 功率合成 %K 微波功率放大器 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FB7181833740AF31AAD9910002374144&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=5D311CA918CA9A03&sid=B93F010195432A97&eid=477F4C97C1F396EF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7