%0 Journal Article
%T An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network<br>8GHz带有RC稳定网络的AlGaN/GaN HEMTs内匹配功率合成放大器的设计
%A Zeng Xuan
%A Chen Xiaojuan
%A Liu Guoguo
%A Yuan Tingting
%A Chen Zhongzi
%A Zhang Hui
%A Wang Liang
%A Li Chengzhan
%A Pang Lei
%A Liu Xinyu
%A Liu Jian
%A <br>曾轩
%A 陈晓娟
%A 刘果果
%A 袁婷婷
%A 陈中子
%A 张辉
%A 王亮
%A 李诚瞻
%A 庞磊
%A 刘新宇
%A 刘键
%J 半导体学报
%D 2008
%I 
%X 8GHz 20W internally matched AlGaN/GaN HEMTs have been developed.The input and output matching networks are realised with microstrip lines on a 0.381mm thick alumina substrate.To improve the stability factor K of the device,a lossy RC network is used at the input of the device.The developed internally matched power amplifier module exhibits 43dBm (20W) power output with a 7.3dB linear gain,38.1% PAE,and combined power efficiency of 70.6% at 8GHz.
%K AlGaN/GaN HEMTs
%K AlGaN/GaN HEMTs
%K internally match
%K power combining
%K power amplifier<br>内匹配
%K 功率合成
%K 微波功率放大器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FB7181833740AF31AAD9910002374144&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=5D311CA918CA9A03&sid=B93F010195432A97&eid=477F4C97C1F396EF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7