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OALib Journal期刊
ISSN: 2333-9721
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An Energy Band Design for p-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors
P型张应变Si/SiGe量子阱红外探测器的能带设计

Keywords: tensile strained layer,Si/SiGe quantum well,infrared detector
张应变
,锗硅量子阱,红外探测器

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Abstract:

Quantum well infrared photodetectors (QWIPs) offer numerous potential applications for defense,industry,and medicine.A novel p-type tensile strained Si/SiGe QWIP is proposed in this paper.The valence band structure of the strained Si/SiGe quantum well and hole effective mass of the strained SiGe alloy are calculated using the k·p method.When tensile strain is induced in the quantum wells,the light-hole state with small effective mass becomes the ground state,which is expected to have lower dark current than n-type QWIPs and also have larger absorption coefficient and better transport characteristics than conventional unstrained or compressive strained p-type QWIPs.Designs for p-type tensile strained Si/SiGe QWIP based on the bound-to-quasi-bound transitions are also discussed.

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