%0 Journal Article
%T An Energy Band Design for p-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors<br>P型张应变Si/SiGe量子阱红外探测器的能带设计
%A Deng Heqing
%A Lin Guijiang
%A Lai Hongkai
%A Li Cheng
%A Chen Songyan
%A Yu Jinzhong
%A <br>邓和清
%A 林桂江
%A 赖虹凯
%A 李成
%A 陈松岩
%A 余金中
%J 半导体学报
%D 2008
%I 
%X Quantum well infrared photodetectors (QWIPs) offer numerous potential applications for defense,industry,and medicine.A novel p-type tensile strained Si/SiGe QWIP is proposed in this paper.The valence band structure of the strained Si/SiGe quantum well and hole effective mass of the strained SiGe alloy are calculated using the k·p method.When tensile strain is induced in the quantum wells,the light-hole state with small effective mass becomes the ground state,which is expected to have lower dark current than n-type QWIPs and also have larger absorption coefficient and better transport characteristics than conventional unstrained or compressive strained p-type QWIPs.Designs for p-type tensile strained Si/SiGe QWIP based on the bound-to-quasi-bound transitions are also discussed.
%K tensile strained layer
%K Si/SiGe quantum well
%K infrared detector<br>张应变
%K 锗硅量子阱
%K 红外探测器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3206F48E95D3767732587D67BD7A1493&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=A1BB529A18D3A83E&eid=E339BF74025BB291&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13