1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors
1.46~1.66GHz 250W宽带硅微波脉冲大功率管

Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors,a high L-band medium silicon pulse power transistor has been developed.Under 40V supply voltage,internally matched devices cover the frequency for high L-band radar applications from 1.46~1.66GHz with a pulsed output power of 250W and 45% collector efficiency.The gain is more than 7.0dB.