%0 Journal Article
%T 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors<br>1.46~1.66GHz 250W宽带硅微波脉冲大功率管
%A Wang Yinsheng
%A Li Xiangguang
%A Fu Yizhu
%A Wang Dianli
%A Ding Xiaoming
%A Sheng Guoxing
%A Kang Xiaohu
%A <br>王因生
%A 李相光
%A 傅义珠
%A 王佃利
%A 丁晓明
%A 盛国兴
%A 康小虎
%J 半导体学报
%D 2008
%I 
%X Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors,a high L-band medium silicon pulse power transistor has been developed.Under 40V supply voltage,internally matched devices cover the frequency for high L-band radar applications from 1.46~1.66GHz with a pulsed output power of 250W and 45% collector efficiency.The gain is more than 7.0dB.
%K silicon
%K microwave
%K power transistor<br>硅
%K 微波
%K 功率管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=494F07865AB2CD74D0B591D714F2673B&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=94C357A881DFC066&sid=78AF84DBB4041008&eid=CF2C3194F1B66D28&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10