Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation
掺氮氧化铪的光学特性研究

HfO2 films were deposited by atomic layer deposition through alternating pulsing of HfN(C2H5)(CH3)]4 and H2O2. A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing. The composition, the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment. With a nitrogen concentration increase from 1.41 to 7.45%, the bandgap of the films decreased from 5.82 to 4.94 eV.