%0 Journal Article
%T Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation
掺氮氧化铪的光学特性研究
%A Li Ye
%A Jiang Tingting
%A Sun Qingqing
%A Wang Pengfei
%A Ding Shijin
%A Zhang Wei
%A
李叶
%A 江婷婷
%A 孙清清
%A 王鹏飞
%A 丁士进
%A 张卫
%J 半导体学报
%D 2012
%I
%X HfO2 films were deposited by atomic layer deposition through alternating pulsing of HfN(C2H5)(CH3)]4 and H2O2. A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing. The composition, the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment. With a nitrogen concentration increase from 1.41 to 7.45%, the bandgap of the films decreased from 5.82 to 4.94 eV.
%K atomic layer deposition
%K HfO2
%K rapid thermal annealing
%K optical property
光学性质
%K 氮浓度
%K 掺入
%K 薄膜沉积
%K 栈
%K 原子层沉积
%K HfO2
%K 过氧化氢
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F1E2B134F3CCFA0815C9C32F815FCD4E&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=38B194292C032A66&sid=7AEE0A43F2BBD0B1&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13