%0 Journal Article %T Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation
掺氮氧化铪的光学特性研究 %A Li Ye %A Jiang Tingting %A Sun Qingqing %A Wang Pengfei %A Ding Shijin %A Zhang Wei %A
李叶 %A 江婷婷 %A 孙清清 %A 王鹏飞 %A 丁士进 %A 张卫 %J 半导体学报 %D 2012 %I %X HfO2 films were deposited by atomic layer deposition through alternating pulsing of HfN(C2H5)(CH3)]4 and H2O2. A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing. The composition, the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment. With a nitrogen concentration increase from 1.41 to 7.45%, the bandgap of the films decreased from 5.82 to 4.94 eV. %K atomic layer deposition %K HfO2 %K rapid thermal annealing %K optical property
光学性质 %K 氮浓度 %K 掺入 %K 薄膜沉积 %K 栈 %K 原子层沉积 %K HfO2 %K 过氧化氢 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F1E2B134F3CCFA0815C9C32F815FCD4E&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=38B194292C032A66&sid=7AEE0A43F2BBD0B1&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13