A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization
一种改进了碰撞电离的超高速InP基SHBT SDD模型

This paper investigates the relationship between the impact ionization and temperature in ultra high-speed InP-based SHBTs.Considering the effect of temperature,an improved equation of the multiplication factor for InP-based HBTs is derived at an approximation of the electric field.A new SDD model including impact ionization and self-heating effects is developed for ultra high-speed InP-based SHBTs.The simulation result is consistent with the experimental data,indicating the accurate predictions of the model.