%0 Journal Article
%T A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization<br>一种改进了碰撞电离的超高速InP基SHBT SDD模型
%A Ge Ji
%A Jin Zhi
%A Liu Xinyu
%A Cheng Wei
%A Wang Xiantai
%A Chen Gaopeng
%A Wu Dexin
%A <br>葛霁
%A 金智
%A 刘新宇
%A 程伟
%A 王显泰
%A 陈高鹏
%A 吴德馨
%J 半导体学报
%D 2008
%I 
%X This paper investigates the relationship between the impact ionization and temperature in ultra high-speed InP-based SHBTs.Considering the effect of temperature,an improved equation of the multiplication factor for InP-based HBTs is derived at an approximation of the electric field.A new SDD model including impact ionization and self-heating effects is developed for ultra high-speed InP-based SHBTs.The simulation result is consistent with the experimental data,indicating the accurate predictions of the model.
%K impact ionization
%K temperature dependent
%K ultra high-speed InP-based SHBTs
%K SDD model<br>碰撞电离
%K 温度依赖
%K 超高速InP基SHBT
%K SDD模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C0129B7D56D7642F32DE489339470606&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=9CF7A0430CBB2DFD&sid=7E679D7D57BC5B35&eid=E35B85FD10020A32&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15