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半导体学报 2009
(NH4)2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights
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Abstract:
The effect of Si (100) surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by (NH4)2S solution, which was attributed to physical adsorption of S atoms. SEM and XPS analyses reveal that Si s