%0 Journal Article
%T (NH4)2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights<br>Si (100) 表面 (NH4)2S 处理及其对Al/Si肖特基势垒的影响
%A Hu Aibin
%A Wang Wenwu
%A Xu Qiuxia
%A <br>胡爱斌
%A 王文武
%A 徐秋霞
%J 半导体学报
%D 2009
%I 
%X The effect of Si (100) surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by (NH4)2S solution, which was attributed to physical adsorption of S atoms. SEM and XPS analyses reveal that Si s
%K 肖特基势垒，硫化铵处理，悬挂键
%K 电流-电压特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=89C67283AF358C4D49E8FB6D52BE82A9&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=5D311CA918CA9A03&sid=1681D7B7CE50EA96&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0