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半导体学报 2001
Model and Analyses of Transient Floating-Body Effect of SOI Devices
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Abstract:
The behavior of transient floating-body effect in SOI MOSFET is simulated.The performance of the device is systematically reviewed by changing the parameters of the device.The influence of the transient floating body on CMOS/SOI circuits is also studied and analyzed,taking a ring oscillator as an example.A device structure is proposed to control the floating-body effect as well as the optimum design of the parameters.